| PART |
Description |
Maker |
| HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| MT48H8M16LFB4-8ITTR |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, LEAD FREE, VFBGA-54
|
Macronix International Co., Ltd.
|
| CYDM256B16-40BVXC CYDM064B16-40BVXC CYDM128B16-40B |
16K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
4K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
8K X 16 DUAL-PORT SRAM, 40 ns, PBGA100 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, MO-195C, VFBGA-100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MT45W512KW16BEGB-708IT |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 6 X 8 MM, 1 MM HEIGHT 0.75 MM PITCH, GREEN, VFBGA-54
|
SMSC, Corp.
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| M377S1723AT3 M377S3323AT0SDRAMDIMMINTEL1.2VERB M37 |
16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect
32MBx72 SDRAM DIMM with PLL & Register based on 16MBx8, 4Banks 4KB Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect
32MBx72 SDRAM DIMM with PLL & Register based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
|
